US Patent Issued to SK hynix on Oct. 27 for "Semiconductor device and method for fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,631, issued on Oct. 27, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Semiconductor device and method for fabricating the same" was invented by Gil Seop Kim (Gyeonggi-do, South Korea) and Seung Hwan Kim (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a lower structure; a first cell isolation layer and a second cell isolation layer stacked in a direction perpendicular to the lower structure and each including a void; a horizontal layer disposed between the first cell isolation layer and the second cell isolation layer; a first horizontal conductive line disposed between the first ...