US Patent Issued to SK hynix on Oct. 20 for "Semiconductor device including through electrode" (South Korean Inventor)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,450, issued on Oct. 20, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Semiconductor device including through electrode" was invented by Chang Woo Kang (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device may include a stacked structure including a plurality of interlayer insulating layers and a plurality of horizontal line layers alternately stacked, a plurality of channel structures passing through the plurality of interlayer insulating layers and the plurality of horizontal line layers, and a first through electrode and a second through electrode passing through the plurality of interlayer insula...