US Patent Issued to SK hynix on Oct. 20 for "Nonvolatile memory device including multiple page buffers and operating method thereof" (South Korean Inventor)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,770,662, issued on Oct. 20, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Nonvolatile memory device including multiple page buffers and operating method thereof" was invented by Soo Yeol Chai (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device including a memory cell array having multiple memory cells, multiple page buffers connected to the memory cells, and an enable control circuit configured to divide the page buffers into P groups, sequentially enable L groups among the P groups during an entry interval of an operation mode, and adjust a length of the entry interval of the operation mode based on a v...