US Patent Issued to SK hynix on Nov. 3 for "Semiconductor memory device and manufacturing method of a semiconductor memory device" (South Korean Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,279, issued on Nov. 3, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Semiconductor memory device and manufacturing method of a semiconductor memory device" was invented by Hyo Sub Yeom (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "There are provided a semiconductor memory device and a manufacturing method of the semiconductor memory device. The semiconductor memory device includes a first source structure and a second source structure spaced apart from each other over a semiconductor substrate, a filling pattern between the first source structure and the second source structure, a memory cell array overlapping with...