US Patent Issued to SK hynix on Nov. 3 for "Semiconductor device and manufacturing method of semiconductor device" (South Korean Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,284, issued on Nov. 3, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Semiconductor device and manufacturing method of semiconductor device" was invented by Nam Jae Lee (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device may include a gate structure including gate lines and insulating layers that are alternately stacked; a channel structure extending through the gate structure; a dummy gate structure including stacked dummy gate lines; a dummy channel structure extending through the dummy gate structure; and an isolation insulating structure including horizontal portions stacked between the gate...