US Patent Issued to SK hynix on Nov. 3 for "Buried-trench dual metal-nitride gate semiconductor device and method for fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,255, issued on Nov. 3, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Buried-trench dual metal-nitride gate semiconductor device and method for fabricating the same" was invented by Dong Soo Kim (Gyeonggi-do, South Korea) and Mun Gi Sim (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present invention provides a semiconductor device with improved electrical characteristics and a method of fabricating the same. A semiconductor device according to an embodiment of the present invention comprises: a substrate including a trench; a gate dielectric layer formed along a sidewall surface and a bottom s...