US Patent Issued to SK hynix on May 19 for "Memory device and method of manufacturing the same" (South Korean Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,633,320, issued on May 19, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Memory device and method of manufacturing the same" was invented by Won Geun Choi (Icheon-si, South Korea), Jeong Hwan Kim (Icheon-si, South Korea) and Jung Shik Jang (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device, and a method of manufacturing the same, includes a first select line including a first cell area, a second select line including a second cell area disposed in a first direction from the first cell area, a first separation pattern extending in a second direction intersecting the first direction between the first cell area...