US Patent Issued to SK hynix on May 12 for "Memory device and method of manufacturing memory device" (South Korean Inventor)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,344, issued on May 12, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Memory device and method of manufacturing memory device" was invented by Hyun Mi Hwang (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a memory device and a method of manufacturing the memory device. The memory device includes: a wafer including a chip region and an edge region surrounding the chip region; a stack structure including a plurality of insulating layers and a plurality of conductive layers, which are alternately stacked over the chip region; a plurality of channel structures disposed in the stack structure; a first sli...