US Patent Issued to SK hynix on March 24 for "Semiconductor device with a low-k spacer and method for fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,190, issued on March 24, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Semiconductor device with a low-k spacer and method for fabricating the same" was invented by Jun Sik Kim (Gyeonggi-do, South Korea) and Jae Man Yoon (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of present invention provide a semiconductor device capable of reducing parasitic capacitance between neighboring pattern structures and a method for fabricating the same. Also, embodiments of the present invention provide a semiconductor device capable of preventing device deterioration due to carbon diffusion and a method for fabrica...