US Patent Issued to SK hynix on June 30 for "Semiconductor devices including contact plugs having silicide layers and methods for fabricating the same" (South Korean Inventor)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,537, issued on June 30, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Semiconductor devices including contact plugs having silicide layers and methods for fabricating the same" was invented by Young Gwang Yoon (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an inter-layer dielectric layer over a substrate; a first contact plug structure coupled to a first active region of the substrate by vertically penetrating the inter-layer dielectric layer, and a second contact plug structure coupled to a second active region of the substrate. The first contact plug structure includes a first ...