US Patent Issued to SK hynix on June 30 for "3D semiconductor memory device including floating gate and method of manufacturing the same" (South Korean Inventor)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,279, issued on June 30, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"3D semiconductor memory device including floating gate and method of manufacturing the same" was invented by In Ku Kang (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided herein may be a semiconductor device and a method of manufacturing the same. The semiconductor device may include a gate stacked structure including a plurality of insulating layers and a plurality of conductive layers that are alternately stacked, a vertical structure extending into the gate stacked structure, a floating gate disposed between the vertical structure and the...