US Patent Issued to SK hynix on June 23 for "Semiconductor device and method of manufacturing semiconductor device" (South Korean Inventor)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,623, issued on June 23, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Semiconductor device and method of manufacturing semiconductor device" was invented by Hee Sung Kong (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device may include a gate structure including conductive layers and insulating layers alternately stacked, a metal channel layer extending through the gate structure, a first semiconductor channel layer extending through the gate structure and connecting to the metal channel layer, and a ferroelectric layer surrounding the metal channel layer and the first semiconductor channel lay...