US Patent Issued to SK hynix on June 23 for "Nonvolatile memory device with integrated backgate and method of manufacturing" (South Korean Inventor)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,616, issued on June 23, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Nonvolatile memory device with integrated backgate and method of manufacturing" was invented by In Ku Kang (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided herein are a semiconductor memory device and a method of manufacturing the semiconductor memory device. The semiconductor memory device includes a gate stacked body including a plurality of interlayer insulating layers and a plurality of conductive layers that are alternately stacked, wherein a top-most conductive layer, among the plurality of conductive layers, corresponds to a backgat...