US Patent Issued to SK hynix on July 7 for "Memory device for supporting efficient erase operation and operating method of memory device" (South Korean Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,676,192, issued on July 7, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Memory device for supporting efficient erase operation and operating method of memory device" was invented by Soo Yeol Chai (Gyeonggi-do, South Korea) and Cheol Joong Park (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory block having multiple string groups, and a controller configured to repeat one or more erase loops, each erase loop including a pulse application interval and a verification interval, configured to determine the multiple string groups as one of pass and fail string groups in a verification interv...