ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,477, issued on July 28, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).
"Vertical transistor and method for fabricating the same" was invented by Young Gwang Yoon (Gyeonggi-do, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present invention disclosure are directed to a vertical transistor having different doping profiles in its upper channel layer and lower channel layer for reducing leakage current while enhancing contact resistance and a method for manufacturing the vertical transistor. According to an embodiment of the present invention disclosure, a semiconductor device comprises a lower contact,...