US Patent Issued to SK hynix on July 28 for "Three-dimensional semiconductor memory device with high aspect ratio" (South Korean Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,451, issued on July 28, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Three-dimensional semiconductor memory device with high aspect ratio" was invented by Min Jae Hur (Icheon-si, South Korea), Ji Hyeun Shin (Icheon-si, South Korea), Ju Hun Kim (Icheon-si, South Korea), Bo Ram Park (Icheon-si, South Korea) and Ji Woong Sue (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a stack structure and a slit structure. The stack structure includes insulation layers and conductive layers alternately stacked with the insulation layers. The slit structure is configured to divide the stack s...