US Patent Issued to SK hynix on July 28 for "Memory device and operation method for improving a read operation" (South Korean Inventor)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,694,935, issued on July 28, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Memory device and operation method for improving a read operation" was invented by Eun Woo Jo (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a cell array and a control circuit. The cell array includes a drain select line, a bit line and a cell string including plural memory cells. The control circuit is configured to sense data stored in a selected cell among the plural memory cells in the cell string and apply a first negative voltage to the drain select line while performing equalization for the plural memory cells....