US Patent Issued to SK hynix on July 14 for "Semiconductor memory device with improved degree of integration" (South Korean Inventor)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,771, issued on July 14, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Semiconductor memory device with improved degree of integration" was invented by Sung Wook Jung (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes: a gate stack structure including a plurality of conductive patterns; a channel structure disposed inside the gate stack structure, the channel structure having a cross-sectional structure including a major axis and a minor axis, which faces in directions intersecting each other; and two or more bit lines extending in a direction intersecting the major axis of the cha...