US Patent Issued to SK hynix on July 14 for "Method of forming semiconductor device including semiconductor liner" (South Korean Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,859, issued on July 14, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Method of forming semiconductor device including semiconductor liner" was invented by Bong Seok Jeon (Gyeonggi-do, South Korea), Ji Yong Kim (Gyeonggi-do, South Korea), Hai Won Kim (Gyeonggi-do, South Korea) and Jeong Hyun Lee (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor device may include forming, on a substrate, a trench which delimits a preliminary active region. A buffer layer may be formed on the preliminary active region using a first heat treatment process that is performed at 520deg C. to 580deg ...