US Patent Issued to SK hynix on Feb. 24 for "Semiconductor memory device and manufacturing method of semiconductor memory device" (South Korean Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,727, issued on Feb. 24, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Semiconductor memory device and manufacturing method of semiconductor memory device" was invented by Jae Young Oh (Icheon-si, South Korea) and Eun Seok Choi (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes: a stack structure including a first interlayer insulating layer, and a plurality of second interlayer insulating layers and a plurality of conductive patterns, which are alternately disposed under the first interlayer insulating layer; a hole penetrating the stack structure; a core insulating pattern, a mem...