US Patent Issued to SK hynix on Feb. 24 for "Memory device and storage device including the same" (South Korean Inventor)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,561,092, issued on Feb. 24, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Memory device and storage device including the same" was invented by Byoung Sung You (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a cell region, a buffer region, and a control circuit configured to: sequentially store read commands in a queue, and control the cell region and the buffer region to perform grouped read operations of outputting respective data blocks requested by the respective read commands."

The patent was filed on May 4, 2023, under Application No. 18/311,893.

*For further information, including im...