US Patent Issued to SK hynix on Feb. 17 for "Semiconductor device and manufacturing method of semiconductor device" (South Korean Inventor)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,286, issued on Feb. 17, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Semiconductor device and manufacturing method of semiconductor device" was invented by Jung Hyeong Kim (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device may include a gate structure including a first conductive layer, a second conductive layer, and a third conductive layer, the third conductive layer being disposed between the first conductive layer and the second conductive layer and thicker than the first conductive layer and the second conductive layer, channel structures passing through the gate structure, and an isola...