ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,269, issued on Feb. 17, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).
"Semiconductor device" was invented by Dong Soo Kim (Gyeonggi-do, South Korea), Yoon Jae Nam (Gyeonggi-do, South Korea) and Mun Gi Sim (Gyeonggi-do, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a substrate including a trench; a bottom gate electrode suitable for gap-filling a lower portion of the trench and including a silicon-doped first metal nitride; and a top gate electrode formed over the bottom gate electrode, and including a silicon-doped second metal nitride having a higher silicon content than a silicon content of...