ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,690, issued on Aug. 4, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).
"Semiconductor device and method for fabricating the same" was invented by Seung Hwan Kim (Gyeonggi-do, South Korea) and Gil Seop Kim (Gyeonggi-do, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device including highly integrated memory cells and a method for fabricating the same in which the method includes: forming a semiconductor layer pattern over a lower structure; forming a gate dielectric layer covering the semiconductor layer pattern; forming a conductive layer surrounding the semiconductor layer pattern over the gate dielectric layer;...