ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,744, issued on Aug. 25, was assigned to SK hynix Inc. (Icheon-si, South Korea).
"Manufacturing method of semiconductor device" was invented by Kang Sik Choi (Seongnam-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A manufacturing method of a semiconductor device is provided. The manufacturing method of the semiconductor device includes forming a sacrificial group including a layer above the doped semiconductor layer, forming a stack structure above the sacrificial group, forming a slit passing through the stack structure, forming a spacer insulating layer over a sidewall of the slit, forming a horizontal space by removing the sacrifi...