US Patent Issued to SK hynix on Aug. 11 for "Memory stack structure including power distribution structures and a high-bandwidth memory including the memory stack structure" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,708,044, issued on Aug. 11, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Memory stack structure including power distribution structures and a high-bandwidth memory including the memory stack structure" was invented by Je Min Bang (Icheon-si, South Korea), Bum Su Kim (Icheon-si, South Korea), Jin Ho Kim (Icheon-si, South Korea) and Jea Hoon Park (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory stack structure incudes a base die; a bottom memory die stacked over the base die; an intermediate memory die stacked over the bottom memory die; a top memory die stacked over the intermediate memory die; a signal transmis...