US Patent Issued to SK hynix on Aug. 11 for "Memory device related to performing a read operation and method of operating the memory device" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,706,147, issued on Aug. 11, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Memory device related to performing a read operation and method of operating the memory device" was invented by Hyun Soo Lee (Icheon-si, South Korea) and Kyu Tae Park (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present technology relates to a semiconductor device. In an embodiment, a memory device capable of reducing a time required for a read operation and preventing an HCI phenomenon of a memory cell may include a plurality of voltage regulators configured to generate operation voltages applied to a word line group, a switch control sign...