ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,550, issued on April 21, was assigned to SK hynix Inc. (Icheon-si, South Korea).
"Memory device with defect-free slits" was invented by Hong Kyeong Do (Icheon-si, South Korea) and Ki Hong Lee (Icheon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes adjacent first and second memory blocks, divided by a slit, in which a cell region and a connection region are divided in a direction perpendicular to the adjacent direction. The slit has a first width between the cell region of the first memory block and the cell region of the second memory block, has the first width between the connection region of the first memor...