ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,508, issued on April 14, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).
"Semiconductor device having side spacer patterns" was invented by Young Gwang Yoon (Gyeonggi-do, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes source/drain regions formed over a substrate, and channel patterns and gate structures formed between the source/drain regions in a horizontal direction. The channel patterns are arranged to be spaced apart from each other over a surface of the substrate in a vertical direction. The gate structures are disposed between the channel patterns in the vertical direction. The gate struct...