US Patent Issued to SK hynix on April 14 for "Semiconductor device and manufacturing method thereof" (South Korean Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,473, issued on April 14, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Semiconductor device and manufacturing method thereof" was invented by Hyun Sub Kim (Gyeonggi-do, South Korea), Sun Woo Kim (Gyeonggi-do, South Korea) and Jin Ho Bin (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device may include a gate structure, a channel structure extending through the gate structure, a first hydrogen supply layer disposed on the gate structure, having a first hydrogen concentration, and comprising an oxygen vacancy, and a hydrogen blocking layer disposed on the first hydrogen supply layer and having a ...