US Patent Issued to SK hynix, UIF (University Industry Foundation), Yonsei University on Aug. 18 for "Etching composition for selectively etching silicon nitride, etching method, and manufacturing method of semiconductor device using the same" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 18 -- United States Patent no. 12,713,852, issued on Aug. 18, was assigned to SK hynix Inc. (Icheon, South Korea) and UIF (University Industry Foundation), Yonsei University (Seoul, South Korea).

"Etching composition for selectively etching silicon nitride, etching method, and manufacturing method of semiconductor device using the same" was invented by Eun Seok Oh (Icheon-si, South Korea), Young Mee Kang (Icheon-si, South Korea), Hyun Goo Kang (Icheon-si, South Korea), Go Un Kim (Icheon-si, South Korea), Sang Woo Lim (Seoul, South Korea) and Tae Gun Park (Gwacheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are an etching composition for selectively etching ...