US Patent Issued to SK hynix, KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION on Nov. 3 for "Semiconductor device including recess gate structure and method of manufacturing the same" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,348, issued on Nov. 3, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea) and KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION (Seoul, South Korea).

"Semiconductor device including recess gate structure and method of manufacturing the same" was invented by Hyun-Yong Yu (Seoul, South Korea), Seung Geun Jung (Seoul, South Korea) and Mu Yeong Son (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a method of manufacturing the same. The semiconductor device has a substrate in which recess regions are formed and semiconductor regions acting as a source region or a drain region is defined between the recess...