US Patent Issued to SK hynic on Oct. 27 for "Method of manufacturing memory device having a source layer" (South Korean Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,645, issued on Oct. 27, was assigned to SK hynic Inc. (Icheon-si, South Korea).

"Method of manufacturing memory device having a source layer" was invented by Jae Young Oh (Icheon-si, South Korea), Dong Hwan Lee (Icheon-si, South Korea) and Eun Seok Choi (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a memory device includes forming a preliminary gate stack structure including interlayer insulating layers and sacrificial patterns stacked on a substrate, a channel hole passing through the preliminary gate stack structure, a memory layer extending along a surface of the channel hole, and a channel layer...