US Patent Issued to SK hynic on May 5 for "Apparatus and method of measuring reliability for flash memory material through a current measurement" (South Korean Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,618,893, issued on May 5, was assigned to SK hynic Inc. (Icheon-si, South Korea).

"Apparatus and method of measuring reliability for flash memory material through a current measurement" was invented by Nam Cheol Jeon (Icheon-si, South Korea), Hea Jong Yang (Icheon-si, South Korea) and Tae Un Youn (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A reliability measuring apparatus includes an oxide-nitride-oxide-alumina (ONOA) current measuring circuit configured to measure an ONOA current by applying an ONOA current measuring voltage to a selected word line coupled to a selected memory cell in a flash memory and a reliability indicator...