US Patent Issued to SK hynic on Aug. 4 for "Memory device and method of operating memory device for programming select transistors" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,700,458, issued on Aug. 4, was assigned to SK hynic Inc. (Incheon-si, South Korea).

"Memory device and method of operating memory device for programming select transistors" was invented by Suk Hwan Choi (Icheon-si, South Korea), Dong Hun Kwak (Icheon-si, South Korea) and Se Chun Park (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "An operating method of a memory device may include performing a pre-program operation on selection transistors that are included in strings, wherein each of the strings comprises a first source selection transistor, a second source selection transistor, a plurality of memory cells, and a drain selection t...