US Patent Issued to SK HYINX on Oct. 6 for "Semiconductor device including ferroelectric memory cell with doped ferroelectric layer" (South Korean Inventor)

ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,755,782, issued on Oct. 6, was assigned to SK HYINX INC. (Icheon-si, South Korea).

"Semiconductor device including ferroelectric memory cell with doped ferroelectric layer" was invented by Jeong Hwan Song (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device may include at least one memory cell. The memory cell may include: a first electrode layer; a second electrode layer; and a self-selecting memory layer interposed between the first electrode layer and the second electrode layer and exhibits different resistance states for storing data and is structured to be either electrically conductive or electrically non-co...