US Patent Issued to SJ Semiconductor(Jiangyin) on Aug. 18 for "3D fan-out packaging structure of interconnection system with ultra-high density and method for manufacturing the same" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 18 -- United States Patent no. 12,713,967, issued on Aug. 18, was assigned to SJ Semiconductor(Jiangyin) Corp. (JiangSu, China).

"3D fan-out packaging structure of interconnection system with ultra-high density and method for manufacturing the same" was invented by Yenheng Chen (Jiangyin City, China) and Chengchung Lin (Jiangyin City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A 3D fan-out packaging structure of an interconnection system with ultra-high density and a method for manufacturing the same are disclosed; the packaging structure includes a first insulating layer, first metal solder pads, a metal pillar, a first chip, a second insulating layer, second metal solder pad...