US Patent Issued to SiTime on Feb. 17 for "Laterally-doped MEMS resonator with piezoelectric layer" (California Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,556,157, issued on Feb. 17, was assigned to SiTime Corp. (Santa Clara, Calif.).

"Laterally-doped MEMS resonator with piezoelectric layer" was invented by Michael Julian Daneman (Campbell, Calif.), Charles I. Grosjean (Los Gatos, Calif.), Aaron Partridge (Cupertino, Calif.) and Paul M. Hagelin (Saratoga, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first silicon layer with first and second regions of substantially different dopant concentration and a resonant MEMS member formed in the first region. A piezoelectric layer is disposed over the resonant MEMS member and conductive material is disposed over the piezoe...