US Patent Issued to SILTRONIC on Sept. 8 for "Method and device for depositing an epitaxial layer on a substrate wafer made of semiconductor material" (German Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,729,441, issued on Sept. 8, was assigned to SILTRONIC AG (Munich).

"Method and device for depositing an epitaxial layer on a substrate wafer made of semiconductor material" was invented by Thomas Stettner (Waging am See, Germany) and Walter Edmaier (Wittibreut, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method deposits an epitaxial layer on a semiconductor substrate having a wedge-shaped cross section. The substrate is arranged in a deposition apparatus to rest concentrically on a susceptor held by a supporting shaft. The supporting shaft rotates with a time period. Deposition gas is passed over the substrate between a gas inlet and outlet...