US Patent Issued to SILTRONIC on July 28 for "Method for depositing an epitaxial layer on a substrate wafer made of semiconductor material in a deposition device" (German Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,692,621, issued on July 28, was assigned to SILTRONIC AG (Munich).

"Method for depositing an epitaxial layer on a substrate wafer made of semiconductor material in a deposition device" was invented by Thomas Stettner (Waging am See, Germany) and Walter Edmaier (Wittibreut, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method deposits an epitaxial layer on a semiconductor substrate. The method includes: placing the substrate on a susceptor, which is surrounded, separated by a gap, from a preheat ring and is held by a supporting shaft; determining an excentricity between an axis perpendicularly through the center of the preheat ring and through...