US Patent Issued to SILTRONIC on July 14 for "Process for manufacturing a monocrystalline silicon semiconductor wafer, and monocrystalline silicon semiconductor wafer" (German, Polish Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,680,189, issued on July 14, was assigned to SILTRONIC AG (Munich).

"Process for manufacturing a monocrystalline silicon semiconductor wafer, and monocrystalline silicon semiconductor wafer" was invented by Timo Mueller (Burghausen, Germany), Michael Boy (Waging am See, Germany), Michael Gehmlich (Weissenborn, Germany), Gudrun Kissinger (Frankfurt, Germany) and Dawid Kot (Slubice, Poland).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor wafer of monocrystalline silicon is produced, in the following order: growing a single crystal of silicon by the CZ method; dividing off a wafer consisting completely of an N region, in which there are no agg...