ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,323, issued on Sept. 15, was assigned to Silicon Storage Technology Inc. (San Jose, Calif.).
"Programming method for non-volatile memory cells" was invented by Viktor Markov (Santa Clara, Calif.) and Alexander Kotov (San Jose, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of programming a memory cell to a target program state associated with a target read current, comprising applying a first pulse of programming voltages that includes a first control gate voltage, applying a second pulse of programming voltages that includes a second control gate voltage, performing a read operation that includes detecting currents through the memo...