US Patent Issued to Silicon Storage Technology on Sept. 1 for "Non-volatile memory cell with ONO compound insulation layer between floating and control gates and a method of fabrication" (California Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,159, issued on Sept. 1, was assigned to Silicon Storage Technology Inc. (San Jose, Calif.).

"Non-volatile memory cell with ONO compound insulation layer between floating and control gates and a method of fabrication" was invented by Viktor Markov (Santa Clara, Calif.), Jong-Won Yoo (Morgan Hill, Calif.), Jinho Kim (Saratoga, Calif.), Nhan Do (Saratoga, Calif.) and Alexander Kotov (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method comprises forming a first insulation layer on an upper surface of a semiconductor substrate, forming a first conductive layer on the first insulation layer, and forming a compound insulation layer on ...