US Patent Issued to Silicon Storage Technology on May 5 for "Split gate non-volatile memory cells, HV and logic devices with FINFET structures, and method of making same" (Chinese, American Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,621,990, issued on May 5, was assigned to Silicon Storage Technology Inc. (San Jose, Calif.).

"Split gate non-volatile memory cells, HV and logic devices with FINFET structures, and method of making same" was invented by Guo Xiang Song (Shanghai), Chunming Wang (Shanghai), Leo Xing (Shanghai), Xian Liu (Sunnyvale, Calif.) and Nhan Do (Saratoga, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming memory cells, high voltage devices and logic devices on fins of a semiconductor substrate's upper surface, and the resulting memory device formed thereby. The memory cells are formed on a pair of the fins, where the floating gate is disposed ...