US Patent Issued to Silicon Storage Technology on May 26 for "Memory device formed on silicon-on-insulator substrate, and method of making same" (French, American Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,783, issued on May 26, was assigned to Silicon Storage Technology Inc. (San Jose, Calif.).

"Memory device formed on silicon-on-insulator substrate, and method of making same" was invented by Serguei Jourba (Aix en Provence, France), Catherine Decobert (Pourrieres, France) and Nhan Do (Saratoga, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a SOI substrate comprising bulk silicon, an insulation layer vertically over the bulk silicon, and a silicon layer vertically over the insulation layer. A memory cell includes source and drain regions formed in the bulk silicon with a channel region of the bulk silicon extending the...