US Patent Issued to SILICON-MAGIC SEMICONDUCTOR TECHNOLOGY (HANGZHOU) on March 17 for "Split-gate power MOS device and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,679, issued on March 17, was assigned to SILICON-MAGIC SEMICONDUCTOR TECHNOLOGY (HANGZHOU) Co. LTD. (Hangzhou, China).

"Split-gate power MOS device and manufacturing method thereof" was invented by Jiakun Wang (Hangzhou City, China) and Bing Wu (Zhejiang City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a split-gate power MOS device and a manufacturing method thereof. The method comprises: forming a trench in an epitaxial layer on a substrate; forming a first insulation layer on a surface of the epitaxial layer and in the trench; filling a cavity with polycrystalline silicon, performing back-etching; performing spin-coating on...