US Patent Issued to Silergy Semiconductor Technology (Hangzhou) on Sept. 8 for "Semiconductor device and method for manufacturing the same" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,192, issued on Sept. 8, was assigned to Silergy Semiconductor Technology (Hangzhou) LTD. (Hangzhou, China).

"Semiconductor device and method for manufacturing the same" was invented by Huan Wang (Hangzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of making a semiconductor device can include: etching a substrate to form a trench in the substrate; forming a liner oxide layer on side surfaces and a process bottom portion of the trench through an oxide layer formation method; and where an oxidation time of a junction between an upper surface of the semiconductor substrate and side walls of the trench is increased by the oxide layer ...