US Patent Issued to Silanna UV Technologies on July 7 for "Semiconductor structure with superlattices" (Australian Inventor)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,504, issued on July 7, was assigned to Silanna UV Technologies Pte Ltd (Singapore).

"Semiconductor structure with superlattices" was invented by Petar Atanackovic (Henley Beach South, Australia).

According to the abstract* released by the U.S. Patent & Trademark Office: "In some embodiments, a semiconductor structure includes a first conductivity type region comprising a first superlattice, and an i-type active region adjacent to the first conductivity type region comprising an i-type superlattice. The first conductivity type region can be a p-type region or an n-type region. The first superlattice can be comprised of a plurality of first unit cells comprising a first set of singl...