US Patent Issued to Silanna Asia on Aug. 25 for "Power device integration on a common substrate" (Florida, California Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,815, issued on Aug. 25, was assigned to Silanna Asia Pte Ltd (Singapore).

"Power device integration on a common substrate" was invented by Jacek Korec (Cape Haze, Fla.) and Boyi Yang (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure for facilitating an integration of power devices on a common substrate includes a first insulating layer formed on the substrate and an active region having a first conductivity type formed on at least a portion of the first insulating layer. A first terminal is formed on an upper surface of the structure and electrically connects with at least one other region having the first co...