US Patent Issued to SiCrystal on May 12 for "Monocrystalline SiC substrates having an asymmetrical geometry and method of producing same" (Japanese, German Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,388, issued on May 12, was assigned to SiCrystal GmbH (Nuremberg, Germany).

"Monocrystalline SiC substrates having an asymmetrical geometry and method of producing same" was invented by Kuniyoshi Okamoto (Kyoto, Japan) and Michael Vogel (Nuremberg, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention provides a monocrystalline SiC substrate with an asymmetric shape for enhancing substrate stiffness against thermal induced deformations, the substrate comprising: a main region, and an asymmetric region located at a peripheral region of the substrate and adjacent to the main region, wherein the asymmetric region is inclined inwar...